FHP75N100A MOSFET. Datasheet pdf. Equivalent
Type Designator: FHP75N100A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 65 nC
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 340 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: TO-220
FHP75N100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHP75N100A Datasheet (PDF)
8.1. Size:859K feihonltd
fhp75n75a.pdf
fhp75n75a.pdf
N N-CHANNEL MOSFET FHP75N75A MAIN CHARACTERISTICS FEATURES ID 75 A Low gate charge VDSS 75 V Crss ( 270pF) Low Crss (typical 270pF ) Rdson-typ @Vgs=10V 9..5m Fast switching Qg-typ 95nC 100% 100% avalanche tested dv/dt Improved
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