FHP80N07B MOSFET. Datasheet pdf. Equivalent

   Type Designator: FHP80N07B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 63 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 57 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-220

FHP80N07B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FHP80N07B Datasheet (PDF)

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fhp80n07b.pdf

N N-CHANNEL MOSFET FHP80N07B MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 63 V Crss ( 180pF) Low Crss (typical 180pF ) Rdson-typ @Vgs=10V 6.3m Fast switching Qg-typ 57nC 100% 100% avalanche tested dv/dt Improved d

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fhp80n07a.pdf