FHP80N08A Datasheet and Replacement
Type Designator: FHP80N08A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 185 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-220
FHP80N08A substitution
FHP80N08A Datasheet (PDF)
fhp80n07b.pdf

N N-CHANNEL MOSFET FHP80N07B MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 63 V Crss ( 180pF) Low Crss (typical 180pF ) Rdson-typ @Vgs=10V 6.3m Fast switching Qg-typ 57nC 100% 100% avalanche tested dv/dt Improved d
Datasheet: FHP75N75A , FHP7N60A , FHF7N60A , FHP7N65A , FHF7N65A , FHP7N65G , FHP80N07A , FHP80N07B , IRF740 , FHP830A , FHP830B , FHP840B , FHP8N60A , FHF8N60A , FHP8N60C , FHF8N60C , FHP8N65A .
Keywords - FHP80N08A MOSFET datasheet
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History: 3N60F | SI7448DP



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