FHS80N07A MOSFET. Datasheet pdf. Equivalent
Type Designator: FHS80N07A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 73 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 360 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-263
FHS80N07A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHS80N07A Datasheet (PDF)
fhs80n07a fhd80n07a.pdf
N N-CHANNEL MOSFET FHS80N07A/FHD80N07A MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 68 V Crss ( 270pF) Low Crss (typical 270pF ) Rdson-typ @Vgs=10V 7m Fast switching Qg-typ 73nC 100% 100% avalanche tested dv/dt Imp
fhs80n08b fhd80n08b.pdf
N N-CHANNEL MOSFET FHS80N08B/FHD80N08B MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 80 V Crss ( 230pF) Low Crss (typical 230pF ) Rdson-typ @Vgs=10V 8m Fast switching Qg-typ 73nC 100% 100% avalanche tested dv/dt Imp
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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