All MOSFET. FHD80N08B Datasheet

 

FHD80N08B Datasheet and Replacement


   Type Designator: FHD80N08B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO-252
 

 FHD80N08B substitution

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FHD80N08B Datasheet (PDF)

 ..1. Size:946K  feihonltd
 fhs80n08b fhd80n08b.pdf pdf_icon

FHD80N08B

N N-CHANNEL MOSFET FHS80N08B/FHD80N08B MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 80 V Crss ( 230pF) Low Crss (typical 230pF ) Rdson-typ @Vgs=10V 8m Fast switching Qg-typ 73nC 100% 100% avalanche tested dv/dt Imp

 7.1. Size:1309K  feihonltd
 fhs80n07a fhd80n07a.pdf pdf_icon

FHD80N08B

N N-CHANNEL MOSFET FHS80N07A/FHD80N07A MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 68 V Crss ( 270pF) Low Crss (typical 270pF ) Rdson-typ @Vgs=10V 7m Fast switching Qg-typ 73nC 100% 100% avalanche tested dv/dt Imp

 7.2. Size:860K  feihonltd
 fhd80n07c.pdf pdf_icon

FHD80N08B

N N-CHANNEL MOSFET FHD80N07C MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 63 V Crss ( 180pF) Low Crss (typical 180pF ) Rdson-typ @Vgs=10V 6.3m Fast switching Qg-typ 57nC 100% 100% avalanche tested dv/dt Improved d

Datasheet: FHF8N65A , FHS100N09A , FHS110N8F5A , FHS130N10A , FHS150N1F4A , FHS80N07A , FHD80N07A , FHS80N08B , IRFB4227 , FHS90N08C , FHT5N60D , FHU100N03A , FHD100N03A , FHU100N03B , FHD100N03B , FHP100N03B , FHU100N03C .

History: IPA60R360P7 | IPD180N10N3 | SSG4842N | KNP4665A | CPC5603 | AMD510C | NTMFS5H414NL

Keywords - FHD80N08B MOSFET datasheet

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