SSI3N80A Datasheet. Specs and Replacement

Type Designator: SSI3N80A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: I2PAK

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SSI3N80A datasheet

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Detailed specifications: SSH8N90A, SSH9N80A, SSH9N90A, SSI1N50A, SSI1N60A, SSI2N60A, SSI2N80A, SSI2N90A, IRF1407, SSI3N90A, SSI4N60A, SSI4N80A, SSI4N80AS, SSI4N90A, SSI4N90AS, SSI5N80A, SSI5N90A

Keywords - SSI3N80A MOSFET specs

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