SSI3N80A Spec and Replacement
Type Designator: SSI3N80A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: I2PAK
SSI3N80A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSI3N80A Specs
Detailed specifications: SSH8N90A , SSH9N80A , SSH9N90A , SSI1N50A , SSI1N60A , SSI2N60A , SSI2N80A , SSI2N90A , 2SK3568 , SSI3N90A , SSI4N60A , SSI4N80A , SSI4N80AS , SSI4N90A , SSI4N90AS , SSI5N80A , SSI5N90A .
History: ZVN4206ASTZ | STP4NA60
Keywords - SSI3N80A MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: ZVN4206ASTZ | STP4NA60
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