FHD100N03C Specs and Replacement
Type Designator: FHD100N03C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12.2 nS
Cossⓘ - Output Capacitance: 132 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: TO-252
FHD100N03C substitution
- MOSFET ⓘ Cross-Reference Search
FHD100N03C datasheet
fhu100n03c fhd100n03c fhp100n03c.pdf
N N-CHANNEL MOSFET FHU100N03C/FHD100N03C/FHP100N03C MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 3.7m Fast switching Rdson-typ @Vgs=4.5V 5.1m 100% 100% avala... See More ⇒
fhu100n03b fhd100n03b fhp100n03b.pdf
N N-CHANNEL MOSFET FHU100N03B/FHD100N03B/FHP100N03B MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 4.9m Fast switching Rdson-typ @Vgs=4.5V 7.2m 100% 100% avala... See More ⇒
fhd100.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China FHD100 NPN Silicon Darlington High Power Transistor Features 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a... See More ⇒
Detailed specifications: FHS90N08C, FHT5N60D, FHU100N03A, FHD100N03A, FHU100N03B, FHD100N03B, FHP100N03B, FHU100N03C, IRF9540, FHP100N03C, FHU120N03C, FHD120N03C, FHU4N60A, FHP4N60A, FHD4N60A, FHF4N60A, FHU4N65A
Keywords - FHD100N03C MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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