FHD100N03C - аналоги, даташиты, параметры транзистора

FHD100N03C Datasheet (PDF)

..1. Size:767K feihonltd
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N N-CHANNEL MOSFET FHU100N03C/FHD100N03C/FHP100N03C MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 3.7m Fast switching Rdson-typ @Vgs=4.5V 5.1m 100% 100% avala

5.1. Size:757K feihonltd
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N N-CHANNEL MOSFET FHU100N03B/FHD100N03B/FHP100N03B MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 4.9m Fast switching Rdson-typ @Vgs=4.5V 7.2m 100% 100% avala

5.2. Size:1061K feihonltd
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8.1. Size:24K shaanxi
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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China FHD100NPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a

Другие MOSFET... FHS90N08C , FHT5N60D , FHU100N03A , FHD100N03A , FHU100N03B , FHD100N03B , FHP100N03B , FHU100N03C , K3569 , FHP100N03C , FHU120N03C , FHD120N03C , FHU4N60A , FHP4N60A , FHD4N60A , FHF4N60A , FHU4N65A .