FHU4N65D Specs and Replacement
Type Designator: FHU4N65D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO-251
FHU4N65D substitution
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FHU4N65D datasheet
fhu4n65d fhd4n65d fhp4n65d fhf4n65d.pdf
N N-CHANNEL MOSFET FHU4N65D/FHD4N65D/FHP4N65D/FHF4N65D MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested ... See More ⇒
fhu4n65a fhp4n65a fhd4n65a fhf4n65a.pdf
N N-CHANNEL MOSFET FHU4N65A/FHP4N65A/FHD4N65A/FHF4N65A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.9 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested ... See More ⇒
fhu4n65e fhd4n65e fhp4n65e fhf4n65e.pdf
N N-CHANNEL MOSFET FHU4N65E/FHD4N65E/FHP4N65E/FHF4N65E MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650 V Crss ( 4.5pF) Low Crss (typical 4.5pF ) Rdson-typ @Vgs=10V 2.1 Fast switching Qg-typ 18nC 100% 100% avalanche tested dv... See More ⇒
Detailed specifications: FHU4N65A, FHP4N65A, FHD4N65A, FHF4N65A, FHU4N65B, FHP4N65B, FHD4N65B, FHF4N65B, AON7410, FHD4N65D, FHP4N65D, FHF4N65D, FHU4N65E, FHD4N65E, FHP4N65E, FHF4N65E, FHU50N06A
Keywords - FHU4N65D MOSFET specs
FHU4N65D cross reference
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FHU4N65D substitution
FHU4N65D replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: FTA06N65 | 2SK1330A
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