All MOSFET. FHU50N06A Datasheet

 

FHU50N06A MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHU50N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-251

 FHU50N06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHU50N06A Datasheet (PDF)

 ..1. Size:299K  feihonltd
 fhu50n06a fhd50n06a.pdf

FHU50N06A FHU50N06A

 6.1. Size:738K  feihonltd
 fhp50n06 fhu50n06d fhd50n06d.pdf

FHU50N06A FHU50N06A

N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SUD08P06-155

 

 
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