All MOSFET. FHD70N03A Datasheet

 

FHD70N03A MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHD70N03A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id|ⓘ - Maximum Drain Current: 68 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.3 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO-252

 FHD70N03A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHD70N03A Datasheet (PDF)

 ..1. Size:708K  feihonltd
 fhu70n03a fhd70n03a.pdf

FHD70N03A FHD70N03A

N N-CHANNEL MOSFET FHU70N03A/FHD70N03A MAIN CHARACTERISTICS FEATURES ID 68 A Low gate charge VDSS 30 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 7.4m Fast switching Rdson-typ @Vgs=4.5V 10.8m 100% 100% avalanche tested

 9.1. Size:135K  china
 fhd70.pdf

FHD70N03A

FHD70 NPN B C D E F G PCM Tc=25 70 W ICM 10 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=2mA 50 100 150 200 250 300 V V(BR)CEO ICE=2mA 50 100 150 200 250 300 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA VBEsat 2.5 V I

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