All MOSFET. FHF7N65B Datasheet

 

FHF7N65B MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHF7N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F

 FHF7N65B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHF7N65B Datasheet (PDF)

 ..1. Size:1075K  feihonltd
 fhu7n65b fhd7n65b fhp7n65b fhf7n65b.pdf

FHF7N65B FHF7N65B

N N-CHANNEL MOSFET FHU7N65B/FHD7N65B /FHP7N65B /FHF7N65B MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.2 Fast switching Qg-typ 24nC 100% 100% avalanche tested

 7.1. Size:1006K  feihonltd
 fhp7n65a fhf7n65a.pdf

FHF7N65B FHF7N65B

N N-CHANNEL MOSFET FHP7N65A /FHF7N65A MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.0 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr

 8.1. Size:1020K  feihonltd
 fhp7n60a fhf7n60a.pdf

FHF7N65B FHF7N65B

N N-CHANNEL MOSFET FHP7N60A /FHF7N60A MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 600V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 0.9 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: APT4020BVR | RFH10N50

 

 
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