SSI4N90AS Specs and Replacement
Type Designator: SSI4N90AS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
Package: I2PAK
SSI4N90AS substitution
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SSI4N90AS datasheet
Detailed specifications: SSI2N80A, SSI2N90A, SSI3N80A, SSI3N90A, SSI4N60A, SSI4N80A, SSI4N80AS, SSI4N90A, 18N50, SSI5N80A, SSI5N90A, SSI6N70A, SSI7N60A, SSP10N60A, SSP1N50A, SSP1N60A, SSP2N60A
Keywords - SSI4N90AS MOSFET specs
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SSI4N90AS replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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