BRD70N08
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRD70N08
Marking Code: BR70N08
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 130
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 68
nS
Cossⓘ -
Output Capacitance: 680
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
TO-252
BRD70N08
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRD70N08
Datasheet (PDF)
..1. Size:892K blue-rocket-elect
brd70n08.pdf 
BRD70N08 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc
7.1. Size:847K blue-rocket-elect
brd70n03.pdf
BRD70N03 Rev.E Dec.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Super high dense cell design for low RDS(on),Rugged and reliable,surface mount package. / Applications DC/
9.1. Size:1389K blue-rocket-elect
brd7002k2.pdf
BRD7002K2 Rev.J Jan.-2024 DATA SHEET / Descriptions SOT-363 N MOS Double N-CHANNEL MOSFET in a SOT-363 Plastic Package. / Features Sensitive gate trigger current and Low Holding current,ESD protected diode, HF Product.
9.2. Size:647K blue-rocket-elect
brd7002k1.pdf
BRD7002K1 Rev.C Oct.-2021 DATA SHEET / Descriptions SOT-363 N MOS Double N-CHANNEL MOSFET in a SOT-363 Plastic Package. / Features Sensitive gate trigger current and Low Holding current.ESD protected diode. HF product.
Datasheet: IRFP360LC
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