SSP10N60A PDF and Equivalents Search

 

SSP10N60A Specs and Replacement

Type Designator: SSP10N60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220

SSP10N60A substitution

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SSP10N60A datasheet

 ..1. Size:936K  samsung
 ssp10n60a.pdf pdf_icon

SSP10N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 25 (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

Detailed specifications: SSI4N80A, SSI4N80AS, SSI4N90A, SSI4N90AS, SSI5N80A, SSI5N90A, SSI6N70A, SSI7N60A, IRFZ24N, SSP1N50A, SSP1N60A, SSP2N60A, SSP2N80A, SSP2N90A, SSP3N70, SSP3N70A, SSP3N80A

Keywords - SSP10N60A MOSFET specs

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