SSP2N60A Datasheet and Replacement. Cross Reference Search

SSP2N60A Datasheet (PDF)

..1. Size:939K samsung
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Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

7.1. Size:862K fairchild semi
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SSP2N60B/SSS2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored to Fast swit

9.1. Size:931K samsung
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Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value Un

9.2. Size:934K samsung
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Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 7.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 5.838 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .