SSP2N60A PDF and Equivalents Search

 

SSP2N60A Specs and Replacement

Type Designator: SSP2N60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO220

SSP2N60A substitution

- MOSFET ⓘ Cross-Reference Search

 

SSP2N60A datasheet

 ..1. Size:939K  samsung
 ssp2n60a.pdf pdf_icon

SSP2N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 3.892 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒

 7.1. Size:862K  fairchild semi
 ssp2n60b sss2n60b.pdf pdf_icon

SSP2N60A

SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored to Fast swit... See More ⇒

 9.1. Size:931K  samsung
 ssp2n80a.pdf pdf_icon

SSP2N60A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 4.688 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un... See More ⇒

 9.2. Size:934K  samsung
 ssp2n90a.pdf pdf_icon

SSP2N60A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 7.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 5.838 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒

SHOW MORE

Detailed specifications: SSI4N90AS, SSI5N80A, SSI5N90A, SSI6N70A, SSI7N60A, SSP10N60A, SSP1N50A, SSP1N60A, P60NF06, SSP2N80A, SSP2N90A, SSP3N70, SSP3N70A, SSP3N80A, SSP3N90A, SSP45N20A, SSP4N55

Keywords - SSP2N60A MOSFET specs

 SSP2N60A cross reference

 SSP2N60A equivalent finder

 SSP2N60A pdf lookup

 SSP2N60A substitution

 SSP2N60A replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.