G16P03S PDF and Equivalents Search

 

G16P03S Specs and Replacement

Type Designator: G16P03S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOP-8

G16P03S substitution

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G16P03S datasheet

 ..1. Size:610K  goford
 g16p03s.pdf pdf_icon

G16P03S

GOFORD G16P03S P-Channel Trench MOSFET Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS -30V ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V) ... See More ⇒

 8.1. Size:1093K  1
 g16p03.pdf pdf_icon

G16P03S

GOFORD G16P03 G16P03 G16P03 Description The G16P03 uses advanced trench technology to provide excellent R , low gate charge . This device is suitable for DS(ON) use as a load switch or in PWM applications. General Features RDS(ON) RDS(ON) VDSS ID @-10V (typ) @-4.5V (typ) Schematic diagram -30V 10.6 16.3 m -16A m High Power and current handing capability Le... See More ⇒

 8.2. Size:751K  1
 g16p03d3.pdf pdf_icon

G16P03S

GOFORD G16P03D3 P-Channel Trench MOSFET Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features VDS -30V Schematic diagram ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V) ... See More ⇒

 8.3. Size:1073K  goford
 g16p03.pdf pdf_icon

G16P03S

GOFORD G16P03 Description The G16P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram RDS(ON) VDSS ID @-10V (typ) -30V -16A 10 m High Power and current handing capability Le... See More ⇒

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Detailed specifications: G1006LE, G1007, G10N10A, G110N06K, G12P10K, G13N04, G15N10C, G16P03, IRFP250, G18N20K, G1NP02ELL, G2003A, G20N06J, G3035-23, G30N03A, G30N03D3, G30N04D3

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