G16P03S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: G16P03S
Маркировка: G16P03
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 3 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1.2 V
Максимально допустимый постоянный ток стока |Id|: 16 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 24 nC
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 215 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
Тип корпуса: SOP-8
G16P03S Datasheet (PDF)
g16p03s.pdf
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GOFORD G16P03SP-Channel Trench MOSFETDescriptionThe G16P03S uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS -30V ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)
g16p03.pdf
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GOFORDG16P03G16P03G16P03DescriptionThe G16P03 uses advanced trench technology to provideexcellent R , low gate charge . This device is suitable forDS(ON)use as a load switch or in PWM applications.General FeaturesRDS(ON) RDS(ON) VDSS ID @-10V (typ) @-4.5V (typ) Schematic diagram-30V 10.6 16.3 m -16A m High Power and current handing capability Le
g16p03d3.pdf
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GOFORD G16P03D3P-Channel Trench MOSFETDescriptionThe G16P03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General Features VDS -30V Schematic diagram ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)
g16p03.pdf
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GOFORDG16P03Description The G16P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram RDS(ON) VDSS ID @-10V (typ) -30V -16A 10 m High Power and current handing capability Le
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