G18N20K PDF and Equivalents Search

 

G18N20K Specs and Replacement

Type Designator: G18N20K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.1 nS

Cossⓘ - Output Capacitance: 81.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO-252

G18N20K substitution

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G18N20K datasheet

 ..1. Size:4491K  goford
 g18n20k.pdf pdf_icon

G18N20K

GOFORD G18N20K Features VDSS RDS(ON) ID @ 10V (typ) 0.136 18A 200V Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant Application DC-DC & DC-AC Converters for telecom, industrial and consumer environment Uninterruptible Power Supply (UPS) Switch Mode Low Power Supplies Industrial Actuators Orderi... See More ⇒

Detailed specifications: G1007, G10N10A, G110N06K, G12P10K, G13N04, G15N10C, G16P03, G16P03S, IRF1407, G1NP02ELL, G2003A, G20N06J, G3035-23, G30N03A, G30N03D3, G30N04D3, G30N20K

Keywords - G18N20K MOSFET specs

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