G18N20K MOSFET. Datasheet pdf. Equivalent
Type Designator: G18N20K
Marking Code: 18N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 65.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17.7 nC
trⓘ - Rise Time: 21.1 nS
Cossⓘ - Output Capacitance: 81.2 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO-252
G18N20K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
G18N20K Datasheet (PDF)
g18n20k.pdf
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GOFORDG18N20KFeatures VDSS RDS(ON) ID @10V (typ) 0.136 18A 200V Fast switching 100% avalanche tested Improved dv/dt capability RoHS CompliantApplication DC-DC & DC-AC Converters for telecom, industrial and consumer environment Uninterruptible Power Supply (UPS) Switch Mode Low Power Supplies Industrial Actuators Orderi
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