All MOSFET. G18N20K Datasheet

 

G18N20K Datasheet and Replacement


   Type Designator: G18N20K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.1 nS
   Cossⓘ - Output Capacitance: 81.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO-252
 

 G18N20K substitution

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G18N20K Datasheet (PDF)

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G18N20K

GOFORDG18N20KFeatures VDSS RDS(ON) ID @10V (typ) 0.136 18A 200V Fast switching 100% avalanche tested Improved dv/dt capability RoHS CompliantApplication DC-DC & DC-AC Converters for telecom, industrial and consumer environment Uninterruptible Power Supply (UPS) Switch Mode Low Power Supplies Industrial Actuators Orderi

Datasheet: G1007 , G10N10A , G110N06K , G12P10K , G13N04 , G15N10C , G16P03 , G16P03S , P0903BDG , G1NP02ELL , G2003A , G20N06J , G3035-23 , G30N03A , G30N03D3 , G30N04D3 , G30N20K .

History: CS24N50ANHD

Keywords - G18N20K MOSFET datasheet

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