G18N20K Datasheet and Replacement
Type Designator: G18N20K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 65.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21.1 nS
Cossⓘ - Output Capacitance: 81.2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO-252
G18N20K substitution
G18N20K Datasheet (PDF)
g18n20k.pdf

GOFORDG18N20KFeatures VDSS RDS(ON) ID @10V (typ) 0.136 18A 200V Fast switching 100% avalanche tested Improved dv/dt capability RoHS CompliantApplication DC-DC & DC-AC Converters for telecom, industrial and consumer environment Uninterruptible Power Supply (UPS) Switch Mode Low Power Supplies Industrial Actuators Orderi
Datasheet: G1007 , G10N10A , G110N06K , G12P10K , G13N04 , G15N10C , G16P03 , G16P03S , P0903BDG , G1NP02ELL , G2003A , G20N06J , G3035-23 , G30N03A , G30N03D3 , G30N04D3 , G30N20K .
History: 2SK2052 | SPN2054T252RG
Keywords - G18N20K MOSFET datasheet
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History: 2SK2052 | SPN2054T252RG



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