G2003A Specs and Replacement
Type Designator: G2003A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 190 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
Package: SOT-23
G2003A substitution
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G2003A datasheet
g2003a.pdf
GOFORD G2003A N-Channel Enhancement Mode Power MOSFET Description The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS = 190V,ID =3A RDS(ON) ... See More ⇒
Detailed specifications: G110N06K, G12P10K, G13N04, G15N10C, G16P03, G16P03S, G18N20K, G1NP02ELL, 10N65, G20N06J, G3035-23, G30N03A, G30N03D3, G30N04D3, G30N20K, G30N20T, G30N20F
Keywords - G2003A MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SUD50N03-06P | HCD90R1K6
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