All MOSFET. G2003A Datasheet

 

G2003A Datasheet and Replacement


   Type Designator: G2003A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 190 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
   Package: SOT-23
 

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G2003A Datasheet (PDF)

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G2003A

GOFORDG2003AN-Channel Enhancement Mode Power MOSFET Description The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS = 190V,ID =3A RDS(ON)

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G2003A

GOFORDG2003Description The G2003 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @10V (typ)520m 200V 2.5A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

Datasheet: G110N06K , G12P10K , G13N04 , G15N10C , G16P03 , G16P03S , G18N20K , G1NP02ELL , 10N65 , G20N06J , G3035-23 , G30N03A , G30N03D3 , G30N04D3 , G30N20K , G30N20T , G30N20F .

History: SPB100N06S2-05 | APM2317AC | AP2N030EN | SI9955DY | SVS5N70MJ | SI9948AEY-T1-E3 | AP30P10GH

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