G20N06J Specs and Replacement
Type Designator: G20N06J
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ -
Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TO-251
- MOSFET ⓘ Cross-Reference Search
G20N06J datasheet
..1. Size:543K goford
g20n06j.pdf 
GOFORD G20N06J N-Channel Enhancement Mode Power MOSFET Description The G20N06J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 60V ID (at VGS = 10V) 20A RDS(ON) (at VGS = 10V) ... See More ⇒
8.1. Size:162K infineon
ipg20n06s2l-35 ipg20n06s2l-35 ds 10.pdf
IPG20N06S2L-35 OptiMOS Power-Transistor Product Summary V 55 V DS 4) 35 m R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S2L-35 PG-TDSON-8-4 2N0... See More ⇒
8.2. Size:201K infineon
ipg20n06s2l-65a.pdf
IPG20N06S2L-65A OptiMOS Power-Transistor Product Summary VDS 55 V RDS(on),max3) 65 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type ... See More ⇒
8.3. Size:196K infineon
ipg20n06s4l-26a.pdf
IPG20N06S4L-26A OptiMOS -T2 Power-Transistor Product Summary VDS 60 V RDS(on),max4) 26 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type... See More ⇒
8.4. Size:196K infineon
ipg20n06s2l-50a.pdf
IPG20N06S2L-50A OptiMOS Power-Transistor Product Summary VDS 55 V RDS(on),max4) 50 m ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type Pac... See More ⇒
8.5. Size:158K infineon
ipg20n06s4l-14 ipg20n06s4l-14 ds 1 0.pdf
IPG20N06S4L-14 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS 4) 13.7 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S4L-14 PG-TDSON-8-4... See More ⇒
8.6. Size:144K infineon
ipg20n06s4l-26 ipg20n06s4l-26 ds 1 0.pdf
IPG20N06S4L-26 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS 4) 26 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S4L-26 PG-TDSON-8-4 4... See More ⇒
8.7. Size:162K infineon
ipg20n06s2l-65 ipg20n06s2l-65 ds 10.pdf
IPG20N06S2L-65 OptiMOS Power-Transistor Product Summary V 55 V DS 3) 65 m R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S2L-65 PG-TDSON-8-4 2N0... See More ⇒
8.8. Size:162K infineon
ipg20n06s2l-50 ipg20n06s2l-50 ds 10.pdf
IPG20N06S2L-50 OptiMOS Power-Transistor Product Summary V 55 V DS 4) 50 m R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S2L-50 PG-TDSON-8-4 2N0... See More ⇒
8.9. Size:294K infineon
ipg20n06s4l-11a.pdf
IPG20N06S4L-11A OptiMOS -T2 Power-Transistor Product Summary VDS 60 V RDS(on),max4) 11.2 mW ID 20 A Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Typ... See More ⇒
8.10. Size:157K infineon
ipg20n06s4l-11 ds 1 0.pdf
IPG20N06S4L-11 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS 4) 11.2 mW R DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S4L-11 PG-TDSON-8-4... See More ⇒
8.11. Size:157K infineon
ipg20n06s4-15 ipg20n06s4-15 ds 1 0.pdf
IPG20N06S4-15 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS 4) 15.5 mW R DS(on),max I 20 A D Features Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPG20N06S4-15 PG-TDSON-8-4 ... See More ⇒
8.12. Size:1345K cn apm
apg20n06s.pdf
APG20N06S 60V N-SGT Enhancement Mode MOSFET General Description APG20N06S use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifor... See More ⇒
Detailed specifications: G12P10K, G13N04, G15N10C, G16P03, G16P03S, G18N20K, G1NP02ELL, G2003A, 5N60, G3035-23, G30N03A, G30N03D3, G30N04D3, G30N20K, G30N20T, G30N20F, G33N03D3
Keywords - G20N06J MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
