G20N06J Datasheet and Replacement
Type Designator: G20N06J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TO-251
G20N06J substitution
G20N06J Datasheet (PDF)
g20n06j.pdf

GOFORDG20N06JN-Channel Enhancement Mode Power MOSFETDescriptionThe G20N06J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 60V ID (at VGS = 10V) 20A RDS(ON) (at VGS = 10V)
ipg20n06s2l-35 ipg20n06s2l-35 ds 10.pdf

IPG20N06S2L-35OptiMOS Power-TransistorProduct SummaryV 55 VDS4)35mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-35 PG-TDSON-8-4 2N0
ipg20n06s2l-65a.pdf

IPG20N06S2L-65AOptiMOS Power-TransistorProduct SummaryVDS55 VRDS(on),max3)65mID20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type
ipg20n06s4l-26a.pdf

IPG20N06S4L-26AOptiMOS-T2 Power-TransistorProduct SummaryVDS 60 VRDS(on),max4) 26mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type
Datasheet: G12P10K , G13N04 , G15N10C , G16P03 , G16P03S , G18N20K , G1NP02ELL , G2003A , 13N50 , G3035-23 , G30N03A , G30N03D3 , G30N04D3 , G30N20K , G30N20T , G30N20F , G33N03D3 .
History: APM9948J | RFW2N06RLE | AF5N60S | RU70190R | IRLU7821CPBF | WFP10N65 | LS4118
Keywords - G20N06J MOSFET datasheet
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History: APM9948J | RFW2N06RLE | AF5N60S | RU70190R | IRLU7821CPBF | WFP10N65 | LS4118



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