G20N06J Datasheet and Replacement
Type Designator: G20N06J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TO-251
G20N06J substitution
G20N06J Datasheet (PDF)
g20n06j.pdf

GOFORDG20N06JN-Channel Enhancement Mode Power MOSFETDescriptionThe G20N06J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 60V ID (at VGS = 10V) 20A RDS(ON) (at VGS = 10V)
ipg20n06s2l-35 ipg20n06s2l-35 ds 10.pdf

IPG20N06S2L-35OptiMOS Power-TransistorProduct SummaryV 55 VDS4)35mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-35 PG-TDSON-8-4 2N0
ipg20n06s2l-65a.pdf

IPG20N06S2L-65AOptiMOS Power-TransistorProduct SummaryVDS55 VRDS(on),max3)65mID20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type
ipg20n06s4l-26a.pdf

IPG20N06S4L-26AOptiMOS-T2 Power-TransistorProduct SummaryVDS 60 VRDS(on),max4) 26mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type
Datasheet: G12P10K , G13N04 , G15N10C , G16P03 , G16P03S , G18N20K , G1NP02ELL , G2003A , 13N50 , G3035-23 , G30N03A , G30N03D3 , G30N04D3 , G30N20K , G30N20T , G30N20F , G33N03D3 .
History: IRFR48ZPBF | IRFH5301 | EM6M2 | SK860316 | SWH15P02 | IRF7341IPBF | HYG800P10LR1U
Keywords - G20N06J MOSFET datasheet
G20N06J cross reference
G20N06J equivalent finder
G20N06J lookup
G20N06J substitution
G20N06J replacement
History: IRFR48ZPBF | IRFH5301 | EM6M2 | SK860316 | SWH15P02 | IRF7341IPBF | HYG800P10LR1U



LIST
Last Update
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
ksa1015yta | 2n4240 | 2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet | 2sd726 | c536 transistor equivalent | 2sa1294 datasheet