G20N06J MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: G20N06J
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 38 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 20 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 2.6 ns
Выходная емкость (Cd): 60 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.027 Ohm
Тип корпуса: TO-251
G20N06J Datasheet (PDF)
g20n06j.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
GOFORDG20N06JN-Channel Enhancement Mode Power MOSFETDescriptionThe G20N06J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 60V ID (at VGS = 10V) 20A RDS(ON) (at VGS = 10V)
ipg20n06s2l-35 ipg20n06s2l-35 ds 10.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPG20N06S2L-35OptiMOS Power-TransistorProduct SummaryV 55 VDS4)35mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-35 PG-TDSON-8-4 2N0
ipg20n06s2l-65a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPG20N06S2L-65AOptiMOS Power-TransistorProduct SummaryVDS55 VRDS(on),max3)65mID20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type
ipg20n06s4l-26a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPG20N06S4L-26AOptiMOS-T2 Power-TransistorProduct SummaryVDS 60 VRDS(on),max4) 26mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type
ipg20n06s2l-50a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPG20N06S2L-50AOptiMOS Power-TransistorProduct SummaryVDS 55 VRDS(on),max4) 50mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type Pac
ipg20n06s4l-14 ipg20n06s4l-14 ds 1 0.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPG20N06S4L-14OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)13.7mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-14 PG-TDSON-8-4
ipg20n06s4l-26 ipg20n06s4l-26 ds 1 0.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPG20N06S4L-26OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)26mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-26 PG-TDSON-8-4 4
ipg20n06s2l-65 ipg20n06s2l-65 ds 10.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPG20N06S2L-65OptiMOS Power-TransistorProduct SummaryV 55 VDS3)65mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-65 PG-TDSON-8-4 2N0
ipg20n06s2l-50 ipg20n06s2l-50 ds 10.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPG20N06S2L-50OptiMOS Power-TransistorProduct SummaryV 55 VDS4)50mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-50 PG-TDSON-8-4 2N0
ipg20n06s4l-11a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPG20N06S4L-11AOptiMOS-T2 Power-TransistorProduct SummaryVDS 60 VRDS(on),max4) 11.2mWID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ
ipg20n06s4l-11 ds 1 0.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPG20N06S4L-11OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)11.2mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-11 PG-TDSON-8-4
ipg20n06s4-15 ipg20n06s4-15 ds 1 0.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
IPG20N06S4-15OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)15.5mWRDS(on),maxI 20 ADFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4-15 PG-TDSON-8-4
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![G20N06J](https://alltransistors.com/images/us.png)
![G20N06J](https://alltransistors.com/images/es.png)
![G20N06J](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C