Справочник MOSFET. G20N06J

 

G20N06J MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: G20N06J
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 38 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Максимально допустимый постоянный ток стока |Id|: 20 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 2.6 ns
   Выходная емкость (Cd): 60 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.027 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для G20N06J

 

 

G20N06J Datasheet (PDF)

 ..1. Size:543K  goford
g20n06j.pdf

G20N06J G20N06J

GOFORDG20N06JN-Channel Enhancement Mode Power MOSFETDescriptionThe G20N06J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 60V ID (at VGS = 10V) 20A RDS(ON) (at VGS = 10V)

 8.1. Size:162K  infineon
ipg20n06s2l-35 ipg20n06s2l-35 ds 10.pdf

G20N06J G20N06J

IPG20N06S2L-35OptiMOS Power-TransistorProduct SummaryV 55 VDS4)35mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-35 PG-TDSON-8-4 2N0

 8.2. Size:201K  infineon
ipg20n06s2l-65a.pdf

G20N06J G20N06J

IPG20N06S2L-65AOptiMOS Power-TransistorProduct SummaryVDS55 VRDS(on),max3)65mID20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

 8.3. Size:196K  infineon
ipg20n06s4l-26a.pdf

G20N06J G20N06J

IPG20N06S4L-26AOptiMOS-T2 Power-TransistorProduct SummaryVDS 60 VRDS(on),max4) 26mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

 8.4. Size:196K  infineon
ipg20n06s2l-50a.pdf

G20N06J G20N06J

IPG20N06S2L-50AOptiMOS Power-TransistorProduct SummaryVDS 55 VRDS(on),max4) 50mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type Pac

 8.5. Size:158K  infineon
ipg20n06s4l-14 ipg20n06s4l-14 ds 1 0.pdf

G20N06J G20N06J

IPG20N06S4L-14OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)13.7mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-14 PG-TDSON-8-4

 8.6. Size:144K  infineon
ipg20n06s4l-26 ipg20n06s4l-26 ds 1 0.pdf

G20N06J G20N06J

IPG20N06S4L-26OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)26mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-26 PG-TDSON-8-4 4

 8.7. Size:162K  infineon
ipg20n06s2l-65 ipg20n06s2l-65 ds 10.pdf

G20N06J G20N06J

IPG20N06S2L-65OptiMOS Power-TransistorProduct SummaryV 55 VDS3)65mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-65 PG-TDSON-8-4 2N0

 8.8. Size:162K  infineon
ipg20n06s2l-50 ipg20n06s2l-50 ds 10.pdf

G20N06J G20N06J

IPG20N06S2L-50OptiMOS Power-TransistorProduct SummaryV 55 VDS4)50mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-50 PG-TDSON-8-4 2N0

 8.9. Size:294K  infineon
ipg20n06s4l-11a.pdf

G20N06J G20N06J

IPG20N06S4L-11AOptiMOS-T2 Power-TransistorProduct SummaryVDS 60 VRDS(on),max4) 11.2mWID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ

 8.10. Size:157K  infineon
ipg20n06s4l-11 ds 1 0.pdf

G20N06J G20N06J

IPG20N06S4L-11OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)11.2mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-11 PG-TDSON-8-4

 8.11. Size:157K  infineon
ipg20n06s4-15 ipg20n06s4-15 ds 1 0.pdf

G20N06J G20N06J

IPG20N06S4-15OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)15.5mWRDS(on),maxI 20 ADFeatures Dual N-channel Normal Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4-15 PG-TDSON-8-4

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