G30N03D3 MOSFET Datasheet: N-Ch, 30V, 30A. Full specification with pinout and replacement list

G30N03D3 Specs and Replacement

Type Designator: G30N03D3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 335 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: DFN3X3-8L

G30N03D3 substitution

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G30N03D3 datasheet

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GOFORD G30N03D3 N-Channel Trench MOSFET Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V) ... See More ⇒

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8.1. Size:586K 1
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MCG30N03 Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings ... See More ⇒

8.2. Size:1587K mcc
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MCG30N03A Features High Density Cell Design For Low RDS(ON) Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ord... See More ⇒