GOFORDG30N03D3N-Channel Trench MOSFETDescriptionThe G30N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V)

GOFORDG30N03D3N-Channel Trench MOSFETDescriptionThe G30N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V)

MCG30N03Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings

MCG30N03AFeatures High Density Cell Design For Low RDS(ON) Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation Epoxy Meets UL 94 V-0 Flammability RatingN-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ord

MCG30N03Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings

GOFORDG30N03AN-Channel Enhancement Mode Power MOSFET Description The G30N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)