All MOSFET. G30N20K Datasheet

 

G30N20K Datasheet and Replacement


   Type Designator: G30N20K
   Marking Code: G30N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 60 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-252
 

 G30N20K substitution

   - MOSFET ⓘ Cross-Reference Search

 

G30N20K Datasheet (PDF)

 ..1. Size:4018K  goford
 g30n20k g30n20t g30n20f.pdf pdf_icon

G30N20K

GOFORDG30N20Description The G30N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @10V (Typ)200V 62m 30A Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

Datasheet: G18N20K , G1NP02ELL , G2003A , G20N06J , G3035-23 , G30N03A , G30N03D3 , G30N04D3 , 2N60 , G30N20T , G30N20F , G33N03D3 , G48N03D3 , G4N60K , G50N03A , G50N03K , G5N50T .

History: AOD208 | UPA2719GR

Keywords - G30N20K MOSFET datasheet

 G30N20K cross reference
 G30N20K equivalent finder
 G30N20K lookup
 G30N20K substitution
 G30N20K replacement

 

 
Back to Top

 


 
.