G30N20K MOSFET. Datasheet pdf. Equivalent
Type Designator: G30N20K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 163 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO-252
G30N20K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
G30N20K Datasheet (PDF)
..1. Size:4018K goford
g30n20k g30n20t g30n20f.pdf
g30n20k g30n20t g30n20f.pdf
GOFORDG30N20Description The G30N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @10V (Typ)200V 62m 30A Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current
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