G30N20K Datasheet and Replacement
Type Designator: G30N20K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 163 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO-252
G30N20K substitution
G30N20K Datasheet (PDF)
g30n20k g30n20t g30n20f.pdf

GOFORDG30N20Description The G30N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @10V (Typ)200V 62m 30A Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current
Datasheet: G18N20K , G1NP02ELL , G2003A , G20N06J , G3035-23 , G30N03A , G30N03D3 , G30N04D3 , 2N60 , G30N20T , G30N20F , G33N03D3 , G48N03D3 , G4N60K , G50N03A , G50N03K , G5N50T .
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