G30N20T Specs and Replacement
Type Designator: G30N20T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 163 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO-220
G30N20T substitution
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G30N20T datasheet
g30n20k g30n20t g30n20f.pdf
GOFORD G30N20 Description The G30N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @ 10V (Typ) 200V 62m 30A Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current ... See More ⇒
Detailed specifications: G1NP02ELL, G2003A, G20N06J, G3035-23, G30N03A, G30N03D3, G30N04D3, G30N20K, IRF520, G30N20F, G33N03D3, G48N03D3, G4N60K, G50N03A, G50N03K, G5N50T, G5N50F
Keywords - G30N20T MOSFET specs
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History: MEE4294-G
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