G5N50F Datasheet. Specs and Replacement
Type Designator: G5N50F 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 58.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-220F
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G5N50F datasheet
g5n50t g5n50f g5n50j g5n50k.pdf
G5N50K GOFORD Description 500V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Application Features R DS(ON)(Max) I VDSS D .@ VGS = 10V DC Motor Control and Class D Amplifier 500V 5A Uninterruptible Power Supply (UPS) 1.4 Fast switching HID 100% avalanche tested Improved dv/dt capability RoHS Compliant & Halogen-Free Package Ordering Informa... See More ⇒
lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf
LNC5N50 LND5N50 LNG5N50 LNH5N50 Lonten N-channel 500V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 500V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 1.6 DS(on),max superior switching performance and high avalanche Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate charge... See More ⇒
Detailed specifications: G30N20T, G30N20F, G33N03D3, G48N03D3, G4N60K, G50N03A, G50N03K, G5N50T, 60N06, G5N50J, G5N50K, G6P06, G7P03L, G86N06K, G90N04, GC11N65T, GC11N65F
Keywords - G5N50F MOSFET specs
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History: JMSH0401MGQ | APTM100A13SCG | IXFH74N20P | TK16A60W | QM03N65D | STF8810 | AGM13T30D
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