All MOSFET. GC11N65F Datasheet

 

GC11N65F Datasheet and Replacement


   Type Designator: GC11N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO-220F
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GC11N65F Datasheet (PDF)

 ..1. Size:4333K  goford
 gc11n65t gc11n65f gc11n65k.pdf pdf_icon

GC11N65F

GC11N65 GOFORD Description VDS RDS (ON ) ID The GC11N 65 uses advanced super junction technology and @ (Max) 10V design to provide excellent R , low gate charge and DS(ON)operation with low gate voltages. This device is suitable for 650V 360m 11 A industrys AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. General F

 9.1. Size:4032K  goford
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GC11N65F

GOFORD GC11N70 Description RDS (ON ) The GC11N70 uses advanced super junction technology and VDSID @ (max) 10V design to provide excellent R and low gate charge. This DS(ON)device is suitable for industry AC-DC SMPS requirement of 11 700V 395m A PFC, AC/DC power conversion, and other industrial power application. General Features New technology for high

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History: SIRA60DP | HLML6401 | TPCP8006 | NTMFS4851NT1G | IPN60R1K5CE | STB9NK60Z-1 | AP85T03GH-HF

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