GC11N65F MOSFET. Datasheet pdf. Equivalent
Type Designator: GC11N65F
Marking Code: GC11N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO-220F
GC11N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GC11N65F Datasheet (PDF)
gc11n65t gc11n65f gc11n65k.pdf
GC11N65 GOFORD Description VDS RDS (ON ) ID The GC11N 65 uses advanced super junction technology and @ (Max) 10V design to provide excellent R , low gate charge and DS(ON)operation with low gate voltages. This device is suitable for 650V 360m 11 A industrys AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. General F
gc11n70k gc11n70t gc11n70f.pdf
GOFORD GC11N70 Description RDS (ON ) The GC11N70 uses advanced super junction technology and VDSID @ (max) 10V design to provide excellent R and low gate charge. This DS(ON)device is suitable for industry AC-DC SMPS requirement of 11 700V 395m A PFC, AC/DC power conversion, and other industrial power application. General Features New technology for high
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