GC11N65F MOSFET: N-Ch, 650V, 11A. Full datasheet with pinout, specifications and replacement transistor list

GC11N65F Datasheet (PDF)

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GC11N65 GOFORD Description VDS RDS (ON ) ID The GC11N 65 uses advanced super junction technology and @ (Max) 10V design to provide excellent R , low gate charge and DS(ON)operation with low gate voltages. This device is suitable for 650V 360m 11 A industrys AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. General F

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GOFORD GC11N70 Description RDS (ON ) The GC11N70 uses advanced super junction technology and VDSID @ (max) 10V design to provide excellent R and low gate charge. This DS(ON)device is suitable for industry AC-DC SMPS requirement of 11 700V 395m A PFC, AC/DC power conversion, and other industrial power application. General Features New technology for high

Datasheet: G5N50F , G5N50J , G5N50K , G6P06 , G7P03L , G86N06K , G90N04 , GC11N65T , EMB04N03H , GC11N65K , GC11N70K , GC11N70T , GC11N70F , GT045N10M , GT045N10T , GT045N10D5 , GT060N10T .