GT10N10 Datasheet. Specs and Replacement

Type Designator: GT10N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 28.9 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO-252

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GT10N10 substitution

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GT10N10 datasheet

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GT10N10

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GT10N10

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C10 A TO-247 AD (IXGH) IC90 TC = 90 C5 A ICM ... See More ⇒

 8.2. Size:187K  ixys
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GT10N10

VCES = 1700V High Voltage IXGH10N170 IC90 = 10A IGBT IXGT10N170 VCE(sat) 4.0V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 1700 V C C (TAB) E VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transient 30 V IC25 TC = 25 C 20 A G E IC90 TC = 90 C 10 A C (TAB) ICM TC = 25 C,... See More ⇒

 8.3. Size:565K  ixys
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GT10N10

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C10 A TO-247 AD (IXGH) IC90 TC = 90 C5 A ICM ... See More ⇒

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Detailed specifications: GT045N10M, GT045N10T, GT045N10D5, GT060N10T, GT060N10M, GT070N15T, GT1003A, GT1003B, AOD4184A, GT125N10T, GT125N10M, GT125N10F, GT12N06S, GT130N03D5, GT15N10S, GT45N06, GT52N10D5

Keywords - GT10N10 MOSFET specs

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