All MOSFET. GT10N10 Datasheet

 

GT10N10 Datasheet and Replacement


   Type Designator: GT10N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 28.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO-252
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GT10N10 Datasheet (PDF)

 ..1. Size:1568K  goford
 gt10n10.pdf pdf_icon

GT10N10

GOFORD GT10N10Description The GT10N10 uses advanced trench technology and design to provide excellent R , low gate charge. This device is DS(ON)suitable for use in Synchronous-recification application. General Features Schematic Diagram VDSS RDS O N RDS O N ID @ (Typ) @ (Typ) 10V 4.5V 7 m m A 100V 115 150 High power and current handing capability

 8.1. Size:562K  ixys
 ixgt10n170a.pdf pdf_icon

GT10N10

IXGH 10N170AVCES = 1700 VHigh VoltageIXGT 10N170AIC25 = 10 AIGBTVCE(sat) = 6.0 Vtfi(typ) = 35 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C10 ATO-247 AD (IXGH)IC90 TC = 90C5 AICM

 8.2. Size:187K  ixys
 ixgt10n170.pdf pdf_icon

GT10N10

VCES = 1700VHigh Voltage IXGH10N170IC90 = 10AIGBT IXGT10N170VCE(sat) 4.0VTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 1700 VC C (TAB)EVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VTO-268 (IXGT)VGEM Transient 30 VIC25 TC = 25C 20 AGEIC90 TC = 90C 10 AC (TAB)ICM TC = 25C,

 8.3. Size:565K  ixys
 ixgh10n170a ixgt10n170a.pdf pdf_icon

GT10N10

IXGH 10N170AVCES = 1700 VHigh VoltageIXGT 10N170AIC25 = 10 AIGBTVCE(sat) = 6.0 Vtfi(typ) = 35 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C10 ATO-247 AD (IXGH)IC90 TC = 90C5 AICM

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Keywords - GT10N10 MOSFET datasheet

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