2SK1795 Specs and Replacement
Type Designator: 2SK1795
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Qg ⓘ - Total Gate Charge: 66 nC
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 285 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: TO3P
2SK1795 substitution
- MOSFET ⓘ Cross-Reference Search
2SK1795 datasheet
2sk1796.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: 2SK1756, 2SK1757, 2SK1758, 2SK1760, 2SK1784, 2SK1785, 2SK1793, 2SK1794, IRFP460, 2SK1796, 2SK1824, 2SK1850, 2SK1851, 2SK1852, 2SK1853, 2SK1917-MR, 2SK193
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
