All MOSFET. GT125N10T Datasheet


GT125N10T MOSFET. Datasheet pdf. Equivalent

Type Designator: GT125N10T

Marking Code: GT125N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 192 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 130 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 101.6 nC

Rise Time (tr): 7.5 nS

Drain-Source Capacitance (Cd): 792.3 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0046 Ohm

Package: TO-220

GT125N10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search


GT125N10T Datasheet (PDF)

0.1. gt125n10t gt125n10m gt125n10f.pdf Size:3940K _goford


GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu

9.1. gt125a-b-v-g-d-e-zh-i-k-l.pdf Size:414K _russia


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