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GT125N10T Specs and Replacement


   Type Designator: GT125N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 792.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: TO-220
 

 GT125N10T substitution

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GT125N10T Specs

 ..1. Size:3940K  goford
 gt125n10t gt125n10m gt125n10f.pdf pdf_icon

GT125N10T

GT125N10 GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON) technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.) charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130 A 4.1m to get better ruggedness and suitable to use in motor control applications. Applications Features Consu... See More ⇒

 9.1. Size:414K  russia
 gt125a-b-v-g-d-e-zh-i-k-l.pdf pdf_icon

GT125N10T

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Detailed specifications: GT045N10T , GT045N10D5 , GT060N10T , GT060N10M , GT070N15T , GT1003A , GT1003B , GT10N10 , IRFZ44N , GT125N10M , GT125N10F , GT12N06S , GT130N03D5 , GT15N10S , GT45N06 , GT52N10D5 , GT52N10T .

History: 2N4224 | 2N7297

Keywords - GT125N10T MOSFET specs

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