SSP45N20A Datasheet and Replacement
Type Designator: SSP45N20A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 117 nC
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 530 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO220
SSP45N20A substitution
SSP45N20A Datasheet (PDF)
ssp45n20a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input CapacitanceID = 35 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
ssp45n20b.pdf

November 2001SSP45N20B/SSS45N20B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 133 nC)planar, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored
ssp45n20b sss45n20b.pdf

November 2001SSP45N20B/SSS45N20B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 133 nC)planar, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored
Datasheet: SSP1N60A , SSP2N60A , SSP2N80A , SSP2N90A , SSP3N70 , SSP3N70A , SSP3N80A , SSP3N90A , RU6888R , SSP4N55 , SSP4N60 , SSP4N60AS , SSP4N70 , SSP4N70A , SSP4N80A , SSP4N80AS , SSP4N90A .
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