All MOSFET. DMT10H015LPS Datasheet

 

DMT10H015LPS MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMT10H015LPS
   Marking Code: T1015LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33.3 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 261 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: POWERDI5060-8

 DMT10H015LPS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMT10H015LPS Datasheet (PDF)

 ..1. Size:436K  diodes
 dmt10h015lps.pdf

DMT10H015LPS DMT10H015LPS

Green DMT10H015LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On-State Losses 44A 16m @ VGS = 10V Low Input Capacitance 100V Fast Switching Speed 41A 18m @ VG

 0.1. Size:436K  1
 dmt10h015lps-13.pdf

DMT10H015LPS DMT10H015LPS

Green DMT10H015LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On-State Losses 44A 16m @ VGS = 10V Low Input Capacitance 100V Fast Switching Speed 41A 18m @ VG

 4.1. Size:445K  diodes
 dmt10h015lss.pdf

DMT10H015LPS DMT10H015LPS

DMT10H015LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) Test in Production BVDSS RDS(ON) Max TA = +25C High Conversion Efficiency Low RDS(ON) Minimizes On-State Losses 8.3A 16m @ VGS = 10V 100V Low Input Capacitance 7.9A 18m @ VGS = 6V Fast Switching Speed Tot

 6.1. Size:482K  diodes
 dmt10h010lk3.pdf

DMT10H015LPS DMT10H015LPS

DMT10H010LK3 Green100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application Low RDS(ON) Minimizes Power Losses 8.8m @ VGS = 10V 68.8A Low Qg Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 6.2. Size:546K  diodes
 dmt10h010lct.pdf

DMT10H015LPS DMT10H015LPS

GreenDMT10H010LCT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BV R Package DSS DS(ON) High BV Rating for Power Application DSST = +25C C Low Input/Output Leakage 100V 9.5m @V = 10V TO220AB 98A GS 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Ap

 6.3. Size:367K  diodes
 dmt10h010lss.pdf

DMT10H015LPS DMT10H015LPS

DMT10H010LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX 100% Unclamped Inductive Switch (UIS) Test in Production BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 100V 29.5A 9.5m @ VGS = 10V Low Input Capacitance Fast Switching Speed Totally Lead-Free &

 6.4. Size:261K  inchange semiconductor
 dmt10h010lct.pdf

DMT10H015LPS DMT10H015LPS

isc N-Channel MOSFET Transistor DMT10H010LCTFEATURESDrain Current I = 98A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: QS5K2

 

 
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