Справочник MOSFET. DMT10H015LPS

 

DMT10H015LPS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DMT10H015LPS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 46 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 44 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 261 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: POWERDI5060-8
     - подбор MOSFET транзистора по параметрам

 

DMT10H015LPS Datasheet (PDF)

 ..1. Size:436K  diodes
dmt10h015lps.pdfpdf_icon

DMT10H015LPS

Green DMT10H015LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On-State Losses 44A 16m @ VGS = 10V Low Input Capacitance 100V Fast Switching Speed 41A 18m @ VG

 0.1. Size:436K  1
dmt10h015lps-13.pdfpdf_icon

DMT10H015LPS

Green DMT10H015LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On-State Losses 44A 16m @ VGS = 10V Low Input Capacitance 100V Fast Switching Speed 41A 18m @ VG

 4.1. Size:445K  diodes
dmt10h015lss.pdfpdf_icon

DMT10H015LPS

DMT10H015LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) Test in Production BVDSS RDS(ON) Max TA = +25C High Conversion Efficiency Low RDS(ON) Minimizes On-State Losses 8.3A 16m @ VGS = 10V 100V Low Input Capacitance 7.9A 18m @ VGS = 6V Fast Switching Speed Tot

 6.1. Size:482K  diodes
dmt10h010lk3.pdfpdf_icon

DMT10H015LPS

DMT10H010LK3 Green100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application Low RDS(ON) Minimizes Power Losses 8.8m @ VGS = 10V 68.8A Low Qg Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXTP2R4N120P | RTR025N05 | NDT6N70 | SMK0870F | DMP4025SFG | IPD50R280CE | FK16UM-5

 

 
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