DMT32M5LPS Datasheet and Replacement
Type Designator: DMT32M5LPS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13.2 nS
Cossⓘ - Output Capacitance: 1267 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: POWERDI5060-8
DMT32M5LPS substitution
DMT32M5LPS Datasheet (PDF)
dmt32m5lps.pdf
DMT32M5LPS Green30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Thermally Efficient Package-Cooler Running Applications
dmt32m5lps-13.pdf
DMT32M5LPS Green30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Thermally Efficient Package-Cooler Running Applications
dmt32m5lfg.pdf
DMT32M5LFG Green30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Low RDS(ON) Ensures On-State Losses are Minimized ID Max Excellent Qgd RDS(ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC-DC Converts Small Form Factor Thermally Efficient Package Enables Higher 1.7m @ VGS = 10V
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: BSC032N03SG
Keywords - DMT32M5LPS MOSFET datasheet
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History: BSC032N03SG
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