DMT69M8LSS MOSFET. Datasheet pdf. Equivalent
Type Designator: DMT69M8LSS
Marking Code: T6009LS_T69M8LS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 9.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 33.5 nC
trⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 438 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SO8
DMT69M8LSS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMT69M8LSS Datasheet (PDF)
..1. Size:493K diodes
dmt69m8lss.pdf
dmt69m8lss.pdf
NOT RECOMMENDED FOR NEW DESIGN USE DMT6012LSS DMT69M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID Max BVDSS RDS(ON) Max TA = +25 High Conversion Efficiency C Low RDS(ON) Ensures On-State Losses Are Minimized 12m @ VGS = 10V 9.8A 60V Excellent QGD x RDS(
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