All MOSFET. DMT69M8LSS Datasheet

 

DMT69M8LSS Datasheet and Replacement


   Type Designator: DMT69M8LSS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 9.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.6 nS
   Cossⓘ - Output Capacitance: 438 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SO8
 

 DMT69M8LSS substitution

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DMT69M8LSS Datasheet (PDF)

 ..1. Size:493K  diodes
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DMT69M8LSS

NOT RECOMMENDED FOR NEW DESIGN USE DMT6012LSS DMT69M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID Max BVDSS RDS(ON) Max TA = +25 High Conversion Efficiency C Low RDS(ON) Ensures On-State Losses Are Minimized 12m @ VGS = 10V 9.8A 60V Excellent QGD x RDS(

Datasheet: DMT4011LFG , DMT40M9LPS , DMT6004LPS , DMT6004SCT , DMT6005LPS , DMT6009LFG , DMT6009LPS , DMT6009LSS , IRFZ24N , DMT8012LK3 , DMTH3004LK3 , DMTH4004LK3 , DMTH4004SCTB , DMTH4005SK3 , DMTH4007LK3 , DMTH4007LPS , DMTH6002LPS .

History: SI4622DY | VBZL80N03

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