DMT69M8LSS Specs and Replacement
Type Designator: DMT69M8LSS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 9.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 438 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SO8
DMT69M8LSS substitution
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DMT69M8LSS datasheet
dmt69m8lss.pdf
NOT RECOMMENDED FOR NEW DESIGN USE DMT6012LSS DMT69M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID Max BVDSS RDS(ON) Max TA = +25 High Conversion Efficiency C Low RDS(ON) Ensures On-State Losses Are Minimized 12m @ VGS = 10V 9.8A 60V Excellent QGD x RDS(... See More ⇒
Detailed specifications: DMT4011LFG, DMT40M9LPS, DMT6004LPS, DMT6004SCT, DMT6005LPS, DMT6009LFG, DMT6009LPS, DMT6009LSS, TK10A60D, DMT8012LK3, DMTH3004LK3, DMTH4004LK3, DMTH4004SCTB, DMTH4005SK3, DMTH4007LK3, DMTH4007LPS, DMTH6002LPS
Keywords - DMT69M8LSS MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: DMTH4007LPS | DMT6004SCT | DMP3130L
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