DMTH6005LK3Q MOSFET. Datasheet pdf. Equivalent

   Type Designator: DMTH6005LK3Q
   Marking Code: H6005L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 47.1 nC
   trⓘ - Rise Time: 9.4 nS
   Cossⓘ - Output Capacitance: 965.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO252

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DMTH6005LK3Q Datasheet (PDF)

..1. Size:395K diodes
dmth6005lk3q.pdf pdf_icon

GreenDMTH6005LK3Q 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) max Environments TC = +25C 100% Unclamped Inductive Switching ensures more reliable 60V 5.6m @ VGS = 10V 90A and robust end application Low RDS(ON) minimizes power losses Lo

5.1. Size:314K diodes
dmth6005lct.pdf pdf_icon

DMTH6005LCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures more Reliable 6m @ VGS = 10V 100A 60V and Robust End Application 85A 10m @ VGS = 4.5V Low Input Capacitance Low

5.2. Size:261K inchange semiconductor
dmth6005lct.pdf pdf_icon

isc N-Channel MOSFET Transistor DMTH6005LCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

7.1. Size:481K 1
dmth6002lps-13.pdf pdf_icon

DMTH6002LPS Green60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 2m @ VGS = 10V 100A and Robust End Application 60V 3m @ VGS = 6V

7.2. Size:481K diodes
dmth6002lps.pdf pdf_icon

7.3. Size:601K diodes
dmth6004sk3q.pdf pdf_icon

GreenDMTH6004SK3Q 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature Environments BVDSS RDS(ON) Max QG Typ TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 10) and Robust End Application 95.4nC 60V 3.8m @ VGS = 10V 100A Low RDS(ON) M

7.4. Size:499K diodes
dmth6009lk3.pdf pdf_icon

DMTH6009LK3 Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Max BVDSS RDS(ON) Max TC = +25 Environments C Low RDS(ON) Ensures on State Losses are Minimized 10m @ VGS = 10V 59A Excellent Qgd x RDS(ON) Product (FOM) 60V Advanced Technology for DC/DC Converter

7.5. Size:555K diodes
dmth6009lk3q.pdf pdf_icon

DMTH6009LK3Q Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C ideal for high ambient temperature ID Max BVDSS RDS(ON) Max TC = +25C environments Low RDS(ON) Ensures On State Losses Are Minimized 10m @ VGS = 10V 59A Excellent Qgd x RDS(ON) Product (FOM) 60V Advanced Technology for DC/DC Converters 1

7.6. Size:339K diodes
dmth6004sct.pdf pdf_icon

DMTH6004SCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Max TC = +25C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

7.7. Size:632K diodes
dmth6004sk3.pdf pdf_icon

GreenDMTH6004SK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal For High Ambient Temperature ID Max Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 9) and Robust End Application 60V 3.8m @ VGS = 10V 100A Low RDS(ON) Minimizes Power Losses

7.8. Size:541K diodes
dmth6004sctb.pdf pdf_icon

DMTH6004SCTB Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient Temperature C BVDSS RDS(ON) Max TC = +25C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 60V 3.4m @ VGS = 10V 100A and Robust End Application Low RDS(ON) Minimizes Power Losses

7.9. Size:261K inchange semiconductor
dmth6004sct.pdf pdf_icon

isc N-Channel MOSFET Transistor DMTH6004SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

7.10. Size:254K inchange semiconductor
dmth6004sctb.pdf pdf_icon

isc N-Channel MOSFET Transistor DMTH6004SCTBFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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DMTH6005LK3Q MOSFET. Datasheet pdf. Equivalent

DMTH6005LK3Q Datasheet (PDF)

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