Справочник MOSFET. DMTH6005LK3Q

 

DMTH6005LK3Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMTH6005LK3Q
   Маркировка: H6005L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 47.1 nC
   trⓘ - Время нарастания: 9.4 ns
   Cossⓘ - Выходная емкость: 965.2 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm
   Тип корпуса: TO252

 Аналог (замена) для DMTH6005LK3Q

 

 

DMTH6005LK3Q Datasheet (PDF)

 ..1. Size:395K  diodes
dmth6005lk3q.pdf

DMTH6005LK3Q
DMTH6005LK3Q

GreenDMTH6005LK3Q 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) max Environments TC = +25C 100% Unclamped Inductive Switching ensures more reliable 60V 5.6m @ VGS = 10V 90A and robust end application Low RDS(ON) minimizes power losses Lo

 5.1. Size:314K  diodes
dmth6005lct.pdf

DMTH6005LK3Q
DMTH6005LK3Q

DMTH6005LCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures more Reliable 6m @ VGS = 10V 100A 60V and Robust End Application 85A 10m @ VGS = 4.5V Low Input Capacitance Low

 5.2. Size:261K  inchange semiconductor
dmth6005lct.pdf

DMTH6005LK3Q
DMTH6005LK3Q

isc N-Channel MOSFET Transistor DMTH6005LCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 7.1. Size:481K  1
dmth6002lps-13.pdf

DMTH6005LK3Q
DMTH6005LK3Q

DMTH6002LPS Green60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 2m @ VGS = 10V 100A and Robust End Application 60V 3m @ VGS = 6V

 7.2. Size:481K  diodes
dmth6002lps.pdf

DMTH6005LK3Q
DMTH6005LK3Q

DMTH6002LPS Green60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 2m @ VGS = 10V 100A and Robust End Application 60V 3m @ VGS = 6V

 7.3. Size:601K  diodes
dmth6004sk3q.pdf

DMTH6005LK3Q
DMTH6005LK3Q

GreenDMTH6004SK3Q 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Max Rated to +175 Ideal for High Ambient Temperature Environments BVDSS RDS(ON) Max QG Typ TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 10) and Robust End Application 95.4nC 60V 3.8m @ VGS = 10V 100A Low RDS(ON) M

 7.4. Size:499K  diodes
dmth6009lk3.pdf

DMTH6005LK3Q
DMTH6005LK3Q

DMTH6009LK3 Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Max BVDSS RDS(ON) Max TC = +25 Environments C Low RDS(ON) Ensures on State Losses are Minimized 10m @ VGS = 10V 59A Excellent Qgd x RDS(ON) Product (FOM) 60V Advanced Technology for DC/DC Converter

 7.5. Size:555K  diodes
dmth6009lk3q.pdf

DMTH6005LK3Q
DMTH6005LK3Q

DMTH6009LK3Q Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C ideal for high ambient temperature ID Max BVDSS RDS(ON) Max TC = +25C environments Low RDS(ON) Ensures On State Losses Are Minimized 10m @ VGS = 10V 59A Excellent Qgd x RDS(ON) Product (FOM) 60V Advanced Technology for DC/DC Converters 1

 7.6. Size:339K  diodes
dmth6004sct.pdf

DMTH6005LK3Q
DMTH6005LK3Q

DMTH6004SCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Max TC = +25C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

 7.7. Size:632K  diodes
dmth6004sk3.pdf

DMTH6005LK3Q
DMTH6005LK3Q

GreenDMTH6004SK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal For High Ambient Temperature ID Max Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 9) and Robust End Application 60V 3.8m @ VGS = 10V 100A Low RDS(ON) Minimizes Power Losses

 7.8. Size:541K  diodes
dmth6004sctb.pdf

DMTH6005LK3Q
DMTH6005LK3Q

DMTH6004SCTB Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient Temperature C BVDSS RDS(ON) Max TC = +25C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 60V 3.4m @ VGS = 10V 100A and Robust End Application Low RDS(ON) Minimizes Power Losses

 7.9. Size:261K  inchange semiconductor
dmth6004sct.pdf

DMTH6005LK3Q
DMTH6005LK3Q

isc N-Channel MOSFET Transistor DMTH6004SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 7.10. Size:254K  inchange semiconductor
dmth6004sctb.pdf

DMTH6005LK3Q
DMTH6005LK3Q

isc N-Channel MOSFET Transistor DMTH6004SCTBFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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