ZXMS6005DGQ-13 PDF and Equivalents Search

 

ZXMS6005DGQ-13 Specs and Replacement

Type Designator: ZXMS6005DGQ-13

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SOT223

ZXMS6005DGQ-13 substitution

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ZXMS6005DGQ-13 datasheet

 ..1. Size:524K  diodes
zxms6005dgq-13.pdf pdf_icon

ZXMS6005DGQ-13

ZXMS6005DGQ-13 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-state Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.0A Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart ... See More ⇒

 3.1. Size:242K  diodes
zxms6005dgq.pdf pdf_icon

ZXMS6005DGQ-13

ZXMS6005DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect... See More ⇒

 4.1. Size:556K  diodes
zxms6005dg.pdf pdf_icon

ZXMS6005DGQ-13

A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 Package Clamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic S level input. It integrates over-te... See More ⇒

 5.1. Size:247K  diodes
zxms6005dt8.pdf pdf_icon

ZXMS6005DGQ-13

A Product Line of Diodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove... See More ⇒

Detailed specifications: DMTH6009LK3, DMTH6009LK3Q, DMTH6010LK3, DMTH6010LPSQ, DMTH6016LSD, DMTH8003SPS, DMTH8012LPSW, ZXMP10A13FQ, P60NF06, 19N20, DMG10N60SCT, DMG3N60SJ3, DMG4N60SCT, DMG4N60SJ3, DMG4N60SK3, DMG7N65SCT, DMG7N65SCTI

Keywords - ZXMS6005DGQ-13 MOSFET specs

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 ZXMS6005DGQ-13 substitution

 ZXMS6005DGQ-13 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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