All MOSFET. ZXMS6005DGQ-13 Datasheet

 

ZXMS6005DGQ-13 Datasheet and Replacement


   Type Designator: ZXMS6005DGQ-13
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SOT223
 

 ZXMS6005DGQ-13 substitution

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ZXMS6005DGQ-13 Datasheet (PDF)

 ..1. Size:524K  diodes
zxms6005dgq-13.pdf pdf_icon

ZXMS6005DGQ-13

ZXMS6005DGQ-13 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-state Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.0A Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart

 3.1. Size:242K  diodes
zxms6005dgq.pdf pdf_icon

ZXMS6005DGQ-13

ZXMS6005DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect

 4.1. Size:556K  diodes
zxms6005dg.pdf pdf_icon

ZXMS6005DGQ-13

A Product Line ofDiodes Incorporated ZXMS6005DG60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 PackageClamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic Slevel input. It integrates over-te

 5.1. Size:247K  diodes
zxms6005dt8.pdf pdf_icon

ZXMS6005DGQ-13

A Product Line ofDiodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

Datasheet: DMTH6009LK3 , DMTH6009LK3Q , DMTH6010LK3 , DMTH6010LPSQ , DMTH6016LSD , DMTH8003SPS , DMTH8012LPSW , ZXMP10A13FQ , AO3401 , 19N20 , DMG10N60SCT , DMG3N60SJ3 , DMG4N60SCT , DMG4N60SJ3 , DMG4N60SK3 , DMG7N65SCT , DMG7N65SCTI .

History: AON6206 | IRFSL3107PBF | HMS21N60F | SI1013X

Keywords - ZXMS6005DGQ-13 MOSFET datasheet

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