ZXMS6005DGQ-13 - описание и поиск аналогов

 

ZXMS6005DGQ-13. Аналоги и основные параметры

Наименование производителя: ZXMS6005DGQ-13

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.69 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm

Тип корпуса: SOT223

Аналог (замена) для ZXMS6005DGQ-13

- подборⓘ MOSFET транзистора по параметрам

 

ZXMS6005DGQ-13 даташит

 ..1. Size:524K  diodes
zxms6005dgq-13.pdfpdf_icon

ZXMS6005DGQ-13

ZXMS6005DGQ-13 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-state Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.0A Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart

 3.1. Size:242K  diodes
zxms6005dgq.pdfpdf_icon

ZXMS6005DGQ-13

ZXMS6005DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 200m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Protect

 4.1. Size:556K  diodes
zxms6005dg.pdfpdf_icon

ZXMS6005DGQ-13

A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 2 A SOT223 Package Clamping Energy 490 mJ DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic S level input. It integrates over-te

 5.1. Size:247K  diodes
zxms6005dt8.pdfpdf_icon

ZXMS6005DGQ-13

A Product Line of Diodes Incorporated ZXMS6005DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 m Nominal load current (VIN = 5V) 1.8 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6005DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

Другие MOSFET... DMTH6009LK3 , DMTH6009LK3Q , DMTH6010LK3 , DMTH6010LPSQ , DMTH6016LSD , DMTH8003SPS , DMTH8012LPSW , ZXMP10A13FQ , P60NF06 , 19N20 , DMG10N60SCT , DMG3N60SJ3 , DMG4N60SCT , DMG4N60SJ3 , DMG4N60SK3 , DMG7N65SCT , DMG7N65SCTI .

History: 2SK1489 | 2SK2146 | STM8362 | APM2300CAC | AOD2610E | ELM32414LA | R6007KNX

 

 

 

 

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