All MOSFET. DMG4N60SK3 Datasheet

 

DMG4N60SK3 Datasheet and Replacement


   Type Designator: DMG4N60SK3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO252
 

 DMG4N60SK3 substitution

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DMG4N60SK3 Datasheet (PDF)

 ..1. Size:375K  diodes
dmg4n60sk3.pdf pdf_icon

DMG4N60SK3

NOT RECOMMENDED FOR NEW DESIGN USE DMN60H3D5SK3 / DMN60H4D5SK3 DMG4N60SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switch (UIS) Test in Production V(BR)DSS (@ TJ Max) RDS(ON) Max TC = +25C Low Gate Input Resistance 650V 3.7A Low Input Capacitance 2.3 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Note

 ..2. Size:266K  inchange semiconductor
dmg4n60sk3.pdf pdf_icon

DMG4N60SK3

isc N-Channel MOSFET Transistor DMG4N60SK3FEATURESDrain Current I = 3.7A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 6.1. Size:396K  diodes
dmg4n60sj3.pdf pdf_icon

DMG4N60SK3

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SJ3 DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS (@ TJ Max) RDS(ON) Max TC = +25C High BVDSS Rating for Power Application 650V 3.0A Low Input Capacitance 2.5 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony F

 6.2. Size:388K  diodes
dmg4n60sct.pdf pdf_icon

DMG4N60SK3

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SCT DMG4N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) High BVDSS Rating for Power Application TC = +25C Low Input/Output Leakage 650V 2.5@VGS = 10V 4.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

Datasheet: DMTH8012LPSW , ZXMP10A13FQ , ZXMS6005DGQ-13 , 19N20 , DMG10N60SCT , DMG3N60SJ3 , DMG4N60SCT , DMG4N60SJ3 , MMIS60R580P , DMG7N65SCT , DMG7N65SCTI , DMG7N65SJ3 , DMG8N65SCT , DMJ70H1D0SV3 , DMJ70H1D3SH3 , DMJ70H1D4SV3 , DMJ70H1D5SV3 .

History: SM6008NF | AP60SL600AIN | DH045N06E | 2SK1813 | HAT2174N

Keywords - DMG4N60SK3 MOSFET datasheet

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