All MOSFET. DMG4N60SK3 Datasheet

 

DMG4N60SK3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMG4N60SK3
   Marking Code: 4N3D0S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.3 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO252

 DMG4N60SK3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMG4N60SK3 Datasheet (PDF)

 ..1. Size:375K  diodes
 dmg4n60sk3.pdf

DMG4N60SK3 DMG4N60SK3

NOT RECOMMENDED FOR NEW DESIGN USE DMN60H3D5SK3 / DMN60H4D5SK3 DMG4N60SK3 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switch (UIS) Test in Production V(BR)DSS (@ TJ Max) RDS(ON) Max TC = +25C Low Gate Input Resistance 650V 3.7A Low Input Capacitance 2.3 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Note

 ..2. Size:266K  inchange semiconductor
 dmg4n60sk3.pdf

DMG4N60SK3 DMG4N60SK3

isc N-Channel MOSFET Transistor DMG4N60SK3FEATURESDrain Current I = 3.7A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 6.1. Size:396K  diodes
 dmg4n60sj3.pdf

DMG4N60SK3 DMG4N60SK3

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SJ3 DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS (@ TJ Max) RDS(ON) Max TC = +25C High BVDSS Rating for Power Application 650V 3.0A Low Input Capacitance 2.5 @ VGS = 10V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony F

 6.2. Size:388K  diodes
 dmg4n60sct.pdf

DMG4N60SK3 DMG4N60SK3

NOT RECOMMENDED FOR NEW DESIGN USE DMG3N60SCT DMG4N60SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) High BVDSS Rating for Power Application TC = +25C Low Input/Output Leakage 650V 2.5@VGS = 10V 4.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 6.3. Size:273K  inchange semiconductor
 dmg4n60sj3.pdf

DMG4N60SK3 DMG4N60SK3

isc N-Channel MOSFET Transistor DMG4N60SJ3FEATURESDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.4. Size:260K  inchange semiconductor
 dmg4n60sct.pdf

DMG4N60SK3 DMG4N60SK3

isc N-Channel MOSFET Transistor DMG4N60SCTFEATURESDrain Current I = 4.5A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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