DMJ70H600SH3 PDF and Equivalents Search

 ..1. Size:453K  diodes
 dmj70h600sh3.pdf

DMJ70H600SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID BVDSS RDS(ON) Max High BVDSS Rating for Power Application TC = +25 C Low Input Capacitance 700V 0.6 @ VGS = 10V 11A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applicati... See More ⇒

 ..2. Size:274K  inchange semiconductor
 dmj70h600sh3.pdf

isc N-Channel MOSFET Transistor DMJ70H600SH3 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p... See More ⇒

 6.1. Size:452K  diodes
 dmj70h601sk3.pdf

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H601SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Input Resistance ID BVDSS RDS(ON) max Low Input Capacitance TC = +25 C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 700V 0.6 @ VGS = 10V 8A Halogen and Antimony Free. Green Device (Note 3) Description and A... See More ⇒

 6.2. Size:559K  diodes
 dmj70h601sv3.pdf

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 6.3. Size:266K  inchange semiconductor
 dmj70h601sk3.pdf

isc N-Channel MOSFET Transistor DMJ70H601SK3 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

 6.4. Size:274K  inchange semiconductor
 dmj70h601sv3.pdf

isc N-Channel MOSFET Transistor DMJ70H601SV3 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒