DMJ70H600SH3 - аналоги, даташиты, параметры транзистора

DMJ70H600SH3 Datasheet (PDF)

..1. Size:453K diodes
dmj70h600sh3.pdf pdf_icon

DMJ70H600SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID BVDSS RDS(ON) Max High BVDSS Rating for Power Application TC = +25C Low Input Capacitance 700V 0.6 @ VGS = 10V 11A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applicati

..2. Size:274K inchange semiconductor
dmj70h600sh3.pdf pdf_icon

isc N-Channel MOSFET Transistor DMJ70H600SH3FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

6.1. Size:452K diodes
dmj70h601sk3.pdf pdf_icon

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H601SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Input Resistance ID BVDSS RDS(ON) max Low Input Capacitance TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 700V 0.6 @ VGS = 10V 8A Halogen and Antimony Free. Green Device (Note 3) Description and A

6.2. Size:559K diodes
dmj70h601sv3.pdf pdf_icon

NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATIVE PART DMJ70H601SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID BVDSS RDS(ON) Max High BVDSS Rating for Power Application TC = +25C Low Input Capacitance 700V 0.6 @ VGS = 10V 8A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.