Справочник MOSFET. DMJ70H600SH3

 

DMJ70H600SH3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMJ70H600SH3
   Маркировка: 70H600
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 113 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 18.2 nC
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 524 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO251

 Аналог (замена) для DMJ70H600SH3

 

 

DMJ70H600SH3 Datasheet (PDF)

 ..1. Size:453K  diodes
 dmj70h600sh3.pdf

DMJ70H600SH3 DMJ70H600SH3

DMJ70H600SH3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID BVDSS RDS(ON) Max High BVDSS Rating for Power Application TC = +25C Low Input Capacitance 700V 0.6 @ VGS = 10V 11A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applicati

 ..2. Size:274K  inchange semiconductor
 dmj70h600sh3.pdf

DMJ70H600SH3 DMJ70H600SH3

isc N-Channel MOSFET Transistor DMJ70H600SH3FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 6.1. Size:452K  diodes
 dmj70h601sk3.pdf

DMJ70H600SH3 DMJ70H600SH3

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H601SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Input Resistance ID BVDSS RDS(ON) max Low Input Capacitance TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 700V 0.6 @ VGS = 10V 8A Halogen and Antimony Free. Green Device (Note 3) Description and A

 6.2. Size:559K  diodes
 dmj70h601sv3.pdf

DMJ70H600SH3 DMJ70H600SH3

NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATIVE PART DMJ70H601SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID BVDSS RDS(ON) Max High BVDSS Rating for Power Application TC = +25C Low Input Capacitance 700V 0.6 @ VGS = 10V 8A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

 6.3. Size:266K  inchange semiconductor
 dmj70h601sk3.pdf

DMJ70H600SH3 DMJ70H600SH3

isc N-Channel MOSFET Transistor DMJ70H601SK3FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.4. Size:274K  inchange semiconductor
 dmj70h601sv3.pdf

DMJ70H600SH3 DMJ70H600SH3

isc N-Channel MOSFET Transistor DMJ70H601SV3FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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