2SK1796 Datasheet and Replacement
Type Designator: 2SK1796
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 370 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO3P
2SK1796 substitution
2SK1796 Datasheet (PDF)
2sk1796.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 2SK1757 , 2SK1758 , 2SK1760 , 2SK1784 , 2SK1785 , 2SK1793 , 2SK1794 , 2SK1795 , IRFZ44 , 2SK1824 , 2SK1850 , 2SK1851 , 2SK1852 , 2SK1853 , 2SK1917-MR , 2SK193 , 2SK195 .
History: APT1004R2KN | SWD056R68E7T
Keywords - 2SK1796 MOSFET datasheet
2SK1796 cross reference
2SK1796 equivalent finder
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History: APT1004R2KN | SWD056R68E7T
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