All MOSFET. SSP4N80AS Datasheet

 

SSP4N80AS Datasheet and Replacement


   Type Designator: SSP4N80AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220
 

 SSP4N80AS substitution

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SSP4N80AS Datasheet (PDF)

 ..1. Size:208K  samsung
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SSP4N80AS

SSP4N80ASAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

 6.1. Size:860K  samsung
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SSP4N80AS

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.400 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 7.1. Size:203K  samsung
ssp4n80.pdf pdf_icon

SSP4N80AS

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 9.1. Size:178K  1
ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf pdf_icon

SSP4N80AS

Datasheet: SSP3N90A , SSP45N20A , SSP4N55 , SSP4N60 , SSP4N60AS , SSP4N70 , SSP4N70A , SSP4N80A , 5N65 , SSP4N90A , SSP4N90AS , SSP5N80A , SSP5N90A , SSP6N55 , SSP6N60 , SSP6N70A , SSP6N80A .

Keywords - SSP4N80AS MOSFET datasheet

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