SSP4N90AS Datasheet and Replacement
Type Designator: SSP4N90AS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
Package: TO220
SSP4N90AS substitution
SSP4N90AS Datasheet (PDF)
ssp4n90as.pdf

SSP4N90ASAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.5 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch
ssp4n90a.pdf

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
ssp4n60b sss4n60b.pdf

SSP4N60B/SSS4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to Fast switchi
Datasheet: SSP4N55 , SSP4N60 , SSP4N60AS , SSP4N70 , SSP4N70A , SSP4N80A , SSP4N80AS , SSP4N90A , MMD60R360PRH , SSP5N80A , SSP5N90A , SSP6N55 , SSP6N60 , SSP6N70A , SSP6N80A , SSP6N90A , SSP70N10A .
History: FDB2532
Keywords - SSP4N90AS MOSFET datasheet
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SSP4N90AS replacement
History: FDB2532



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