DMTH10H010LCT Datasheet and Replacement

DMTH10H010LCT 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) Package Environments TC = +25C Low Input Capacitance 100V 9.5m @VGS = 10V TO220AB 108A High BVDSS Rating for Power Application Low Input/Output Leakage Description Lead-Free Finish;

isc N-Channel MOSFET Transistor DMTH10H010LCTFEATURESDrain Current I = 108A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

GreenDMTH10H010SCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Package TC = +25C High BVDSS Rating for Power Application 100V 9.5m @VGS = 10V TO220AB 100A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note

isc N-Channel MOSFET Transistor DMTH10H010SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

GreenDMTH10H005SCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) TC = +25C Environments 100V 5m @VGS = 10V 140A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low Input Capacitance Description High BVDSS

GreenDMTH10H005LCT 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) Environments TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 100V 5m @VGS = 10V 140A and Robust End Application Low Input Capacitance Description High BVD

isc N-Channel MOSFET Transistor DMTH10H005SCTFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

isc N-Channel MOSFET Transistor DMTH10H005LCTFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general