DMTH10H010LCT - описание и поиск аналогов

DMTH10H010LCT 100V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) Package Environments TC = +25 C Low Input Capacitance 100V 9.5m @VGS = 10V TO220AB 108A High BVDSS Rating for Power Application Low Input/Output Leakage Description Lead-Free Finish;

isc N-Channel MOSFET Transistor DMTH10H010LCT FEATURES Drain Current I = 108A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

Green DMTH10H010SCT 100V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Package TC = +25 C High BVDSS Rating for Power Application 100V 9.5m @VGS = 10V TO220AB 100A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note

isc N-Channel MOSFET Transistor DMTH10H010SCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

Green DMTH10H005SCT 100V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 C Ideal for High Ambient Temperature BVDSS RDS(ON) TC = +25 C Environments 100V 5m @VGS = 10V 140A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low Input Capacitance Description High BVDSS

Green DMTH10H005LCT 100V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) Environments TC = +25 C 100% Unclamped Inductive Switching Ensures More Reliable 100V 5m @VGS = 10V 140A and Robust End Application Low Input Capacitance Description High BVD

isc N-Channel MOSFET Transistor DMTH10H005SCT FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

isc N-Channel MOSFET Transistor DMTH10H005LCT FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general