DMTH6004SCTB PDF and Equivalents Search

 

DMTH6004SCTB Specs and Replacement

Type Designator: DMTH6004SCTB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.7 nS

Cossⓘ - Output Capacitance: 1383 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: TO263AB

DMTH6004SCTB substitution

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DMTH6004SCTB datasheet

 ..1. Size:541K  diodes
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DMTH6004SCTB

DMTH6004SCTB Green 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient Temperature C BVDSS RDS(ON) Max TC = +25 C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 60V 3.4m @ VGS = 10V 100A and Robust End Application Low RDS(ON) Minimizes Power Losses ... See More ⇒

 ..2. Size:254K  inchange semiconductor
dmth6004sctb.pdf pdf_icon

DMTH6004SCTB

isc N-Channel MOSFET Transistor DMTH6004SCTB FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

 3.1. Size:339K  diodes
dmth6004sct.pdf pdf_icon

DMTH6004SCTB

DMTH6004SCT 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Max TC = +25 C Low Input/Output Leakage (Note 9) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 60V 3.65m @ VGS = 10V 100A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability... See More ⇒

 3.2. Size:261K  inchange semiconductor
dmth6004sct.pdf pdf_icon

DMTH6004SCTB

isc N-Channel MOSFET Transistor DMTH6004SCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

Detailed specifications: DMT6009LCT, DMT6010SCT, DMTH10H005LCT, DMTH10H005SCT, DMTH10H010LCT, DMTH10H010SCT, DMTH4005SCT, DMTH6004SCT, IRF9540, DMTH6005LCT, DMTH6010SCT, FCD260N65S3, HLP5305, ISCNL256N, ISP80N08S2L, NVD5C648NL, SUK3015

Keywords - DMTH6004SCTB MOSFET specs

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