ISP80N08S2L MOSFET. Datasheet pdf. Equivalent
Type Designator: ISP80N08S2L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm
Package: TO220
ISP80N08S2L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ISP80N08S2L Datasheet (PDF)
..1. Size:260K inchange semiconductor
isp80n08s2l.pdf
isp80n08s2l.pdf
isc N-Channel MOSFET Transistor ISP80N08S2LFEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-V = 75V(Min)DSSStatic Drain-Source On-ResistanceR :7.1m(Max)DS(on)175C operating temperatureAdvanced trench process technology100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAX
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
