All MOSFET. ISP80N08S2L Datasheet

 

ISP80N08S2L Datasheet and Replacement


   Type Designator: ISP80N08S2L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm
   Package: TO220
 

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ISP80N08S2L Datasheet (PDF)

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ISP80N08S2L

isc N-Channel MOSFET Transistor ISP80N08S2LFEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-V = 75V(Min)DSSStatic Drain-Source On-ResistanceR :7.1m(Max)DS(on)175C operating temperatureAdvanced trench process technology100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAX

Datasheet: DMTH4005SCT , DMTH6004SCT , DMTH6004SCTB , DMTH6005LCT , DMTH6010SCT , FCD260N65S3 , HLP5305 , ISCNL256N , 2N7000 , NVD5C648NL , SUK3015 , EC4953 , EC8812 , EM8810 , EN2300 , EN2301 , EN2305 .

History: S-LP2307LT1G | RU40S4H | SSF2305 | AP10TN135N | AON2812 | TPHR9003NL | 2SK3985-01

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