ISP80N08S2L PDF and Equivalents Search

 

ISP80N08S2L Specs and Replacement

Type Designator: ISP80N08S2L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm

Package: TO220

ISP80N08S2L substitution

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ISP80N08S2L datasheet

 ..1. Size:260K  inchange semiconductor
 isp80n08s2l.pdf pdf_icon

ISP80N08S2L

isc N-Channel MOSFET Transistor ISP80N08S2L FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V = 75V(Min) DSS Static Drain-Source On-Resistance R 7.1m (Max) DS(on) 175 C operating temperature Advanced trench process technology 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAX... See More ⇒

Detailed specifications: DMTH4005SCT, DMTH6004SCT, DMTH6004SCTB, DMTH6005LCT, DMTH6010SCT, FCD260N65S3, HLP5305, ISCNL256N, IRF4905, NVD5C648NL, SUK3015, EC4953, EC8812, EM8810, EN2300, EN2301, EN2305

Keywords - ISP80N08S2L MOSFET specs

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